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| BSR 13, BSR 14 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BSR 13 30 V 60 V 5V 250 mW 1) 800 mA 800 mA 200 mA 150/C - 65...+ 150/C BSR 14 40 V 75 V 6V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 50 V, Tj = 150/C IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C BSR 13 BSR 14 ICB0 ICB0 ICB0 ICB0 IEB0 IEB0 - - - - - - Kennwerte (Tj = 25/C) Typ. - - - - - - Max. 30 nA 10 :A 10 nA 10 :A 30 nA 10 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V BSR 13 BSR 14 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 6 Switching Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA BSR 13 BSR 14 BSR 13 BSR 14 BSR 13 BSR 14 BSR 13 BSR 14 BSR 13 BSR 14 BSR 13 BSR 14 BSR 13 BSR 14 hFE hFE hFE hFE hFE hFE hFE 1 BSR 13, BSR 14 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - - - - - - - - 8 pF - - - - - - Max. - - - 300 - - - 400 mV 300 mV 1.6 V 1V 1.3 V 1.2 V 2.6 V 2V - - - 35 ns 15 ns 20 ns 250 ns 200 ns 60 ns 420 K/W 2) BSR 15, BSR 16 BSR 13 = U7 BSR 14 = U8 35 50 75 100 50 30 40 - - - - - 0.6 V - - 250 MHz 300 MHz - - - - - - - RthA Collector saturation volt. - Kollektor-Sattigungsspg. ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat VBEsat fT fT CCB0 ton ICon = 150 mA IBon = 15 mA - IBoff = 15 mA td tr toff ts tf Base saturation voltage - Basis-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 1 2 Collector-Base Capacitance - Kollektor-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 7 |
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